首页> 外文OA文献 >Evidence for in-plane tetragonal c-axis in MnxGa1-x thin films using transmission electron microscopy
【2h】

Evidence for in-plane tetragonal c-axis in MnxGa1-x thin films using transmission electron microscopy

机译:用透射电子显微镜观察mn x Ga 1-x 薄膜中面内四方c轴的证据

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

Tetragonal MnxGa1-x (x = 0.70, 0.75) thin films grown on SrTiO3 substrates exhibit perpendicular magnetic anisotropy with coercive fields between 1 and 2 T. Transmission electron microscopy (TEM) and X-ray diffraction (XRD) reveal that 40 nm samples grown at 300-350 degrees C lead to films with the tetragonal c-axis oriented primarily perpendicular to the film plane but with some fraction of the sample exhibiting the c-axis in the film plane. This structure results in an undesirable secondary magnetic component in the out of plane magnetization. Growth at 300 degrees C with a reduced thickness or Mn concentration significantly decreases the tetragonal c-axis in the film plane. (C) 2015 Elsevier Ltd. All rights reserved.
机译:在SrTiO3衬底上生长的四方MnxGa1-x(x = 0.70,0.75)薄膜表现出垂直磁各向异性,矫顽场在1至2 T之间。透射电子显微镜(TEM)和X射线衍射(XRD)显示生长了40 nm的样品在300-350摄氏度下,薄膜的c轴主要垂直于薄膜平面,但一部分样品在薄膜平面上呈现c轴。这种结构导致面外磁化中不希望有的次级磁性成分。在300摄氏度下以减小的厚度或Mn浓度生长会大大降低薄膜平面中的四边形c轴。 (C)2015 Elsevier Ltd.保留所有权利。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号